Epitaxial lateral overgrowth of GaN by HVPE and MOVPE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4580, Issue , 2001, Pages 214-220

  Zhang, R ^a   Gu, S L ^a   Lu, D Q ^a   Shen, B ^a   Shi, Y ^a   Zhang, L ^b   Kuech, T F ^b   Boleslawski, Marek P ^c   Kuan, T S ^d   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^c Sigma Aldrich Co   (United States)

^d STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL ORIENTATION; HIGH TEMPERATURE PROPERTIES; INTERFACES (MATERIALS); MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SILICA; SUBSTRATES;

DIETHYLGALLIUM CHLORIDE; EPITAXIAL LATERAL OVERGROWTH; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 3242684070     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.444965     Document Type: Article

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