Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1017-1021

  Sun, Z Z ^a   Yoon, S F ^a   Tan, K H ^a   Zhang, R ^a   Jiang, J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MBE Technology Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE COMPOUNDS; DIFFUSION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE;

CARBON DOPING; CARBON TETRABROMIDE; KINETIC MODELS; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

ORGANIC COMPOUNDS;

EID: 3242670801     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1736644     Document Type: Article

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