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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1180-1184

A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide

(1) Lubyshev, D a

a The Pennsylvania State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449083 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (8)

References (14)

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14
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- unpublished
- D. Lubyshev, M. Micovic, N. Gratteau, W-Z. Cai, D. L. Miller, O. Ray, Yu. A. Pusep, M. T. O. Silva, J. C. Galzerani, and K. Bacher, Proceedings of X International MBE Conference (unpublished).
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