Substrate orientation dependence of carbon doping of GaAs using CBr4 source in molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1356-1360

  Schulte, D W ^a,d   Subramanian, S ^a   Ungier, L ^a   Yoo, H M ^b   Venkateswaran, U ^c   Arthur, J R ^a  

^a Oregon State University   (United States)

^b Samsung Microwave Semiconductor   (United States)

^c OAKLAND UNIVERSITY   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000949079     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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