Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide

Applied Physics Letters

Volumn 73, Issue 17, 1998, Pages 2482-2484

  Sugiura, Hideo ^a   Mitsuhara, Manabu ^a   Kondo, Susumu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3242688665     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122489     Document Type: Article

References (8)

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8. Chemical Beam Epitaxy and Related Techniques, edited by J. S. Foord, G. J. Davies, and W. T. Tsang (Wiley, Chichester, 1997), p. 319.