Study on the properties of silicon-based films with high growth rate fabricated by VHF-PECVD at low temperature

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 15, Issue 5, 2004, Pages 507-511

  Zhang, Xiao Dan ^a   Zhao, Ying ^a   Zhu, Feng ^a   Hou, Guo Fu ^a   Wei, Chang Chun ^a   Xiong, Wen Juan ^a   Sun, Jian ^a   Ren, Hui Zhi ^a   Geng, Xin Hua ^a   Xiong, Shao Zhen ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Hydrogenated microcrystalline silicon ( c Si:H); Micro Raman spectroscopy; Transition zone; Very high frequency plasma enhanced chemical vapor deposition (VHF PECVD)

Indexed keywords

ATOMIC FORCE MICROSCOPY; LOW TEMPERATURE PRODUCTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILANES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE VOLUME FRACTION; DEPOSITION RATE; HYDROGENATED MICROCRYSTALLINE SILICON; INTRINSIC MICROCRYSTALLINE MATERIALS; SILANE CONCENTRATION; SILICON BASED FILMS; TRANSITION ZONE;

FILM PREPARATION;

EID: 3242658029     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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