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Applied Physics A: Materials Science and Processing

Volumn 83, Issue 1, 2006, Pages 123-126

Enhancement of polarization in bismuth titanate thin films co-modified by la and Nd for non-volatile memory applications

(3) Giridharan, N V a Subramanian, M b Jayavel, R b

a VIT UNIVERSITY (India)

b ANNA UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CHEMICAL MODIFICATION; DECOMPOSITION; ELECTROCHEMICAL ELECTRODES; FERROELECTRIC MATERIALS; POLARIZATION; RANDOM ACCESS STORAGE; REMANENCE;

BISMUTH TITANATE; FILM CAPACITORS; REMANENT POLARIZATION;

THIN FILMS;

EID: 32244441535 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-005-3469-9 Document Type: Article

Times cited : (12)

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