The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-Ti SMA magnetron sputtered thin films

Applied Physics A: Materials Science and Processing

Volumn 83, Issue 1, 2006, Pages 139-145

  Martins, R M S ^a   Fernandes, F M Braz ^b   Silva, R J C ^b   Pereira, L ^b   Gordo, P R ^c   Maneira, M J P ^c   Beckers, M ^a   Mucklich A ^a   Schell, N ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

^c UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; MAGNETRON SPUTTERING; REACTION KINETICS; SHAPE MEMORY EFFECT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLIZATION KINETICS; NUCLEATION KINETICS; X RAY REFLECTOMETRY;

POLYSILICON;

EID: 32244437815     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-005-3477-9     Document Type: Article

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