Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer

Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003

Volumn 2003-October, Issue , 2003, Pages 39-40

  Yoshida, Y ^a   Nishiguchi, H ^a   Sasaki, M ^a   Abe, S ^a   Ohno, A ^a   Miyashita, M ^a   Ono, K ^a   Yagi, T ^a   Omura, E ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Diode lasers; Laser beams; Optical propagation; Optical refraction; Optical variables control; Optical waveguides; Power generation; Quantum well lasers; Steady state; Waveguide lasers

Indexed keywords

LASER BEAMS; LIGHT PROPAGATION; NUMERICAL MODELS; OPTICAL VARIABLES CONTROL; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; POWER GENERATION; QUALITY CONTROL; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

ACTIVE REGIONS; ASYMMETRIC CLADDING; GAAS SUBSTRATES; LASER CHARACTERISTICS; OPTICAL REFRACTION; STEADY STATE; STRUCTURAL ASYMMETRY; WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 84946109244     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUSOD.2003.1259040     Document Type: Conference Paper

References (3)

1. T. Yagi et al., ISLC'02 Technical Digest,WB4 (2002)
2. H.Nishiguchi et al., Technical Report IEICE (Japanese), LQE2003-8(2003)
3. K. Shigihara et al., J. Quantum Electron, 38, p.1081 (2002)