SCOPUS 정보 검색 플랫폼

Volumn 285, Issue 3, 2005, Pages 327-332

Efficient method and layer design for calibrating compositions and growth rates of AlGaInP layers in 660-nm laser diodes grown by MOCVD

(6) Kim, Bumjoon a Cho, Soohaeng b Shin, Youngchul a Kang, Donghoon a Kim, Youngmin a Park, Yongjo b

a Samsung Electro Mechanics (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

A3. In situ monitoring; A3. Metalorganic vapor phase epitaxy; B1. AlGaInP

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

ALGAINP; IN SITU MONITORING; REFLECTION MONITORING; STANDARD DEVIATIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 27644567121 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.08.040 Document Type: Article

Times cited : (2)

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