High-power 660-nm-band AlGaInP laser diodes with a small aspect ratio for beam divergence

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1154-1157

  Hiroyama, Ryoji ^a   Inoue, Daijiro ^a   Nomura, Yasuhiko ^a   Shono, Masayuki ^a   Sawada, Minoru ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

AlGaInP; Aspect ratio; High power; Internal loss; Optical confinement

Indexed keywords

ASPECT RATIO; EPITAXIAL GROWTH; HIGH POWER LASERS; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

BEAM DIVERGENCE; OPTICAL CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 0036478693     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1154     Document Type: Conference Paper

References (10)