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Volumn 36, Issue 2, 2005, Pages 1266-1269

Distinguished student paper: An LTPS active-matrix process without ion doping

Author keywords

[No Author keywords available]

Indexed keywords

INVESTMENTS; ION IMPLANTATION; LIQUID CRYSTAL DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

EID: 32244432071     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2036235     Document Type: Conference Paper
Times cited : (4)

References (8)
  • 1
    • 0036721729 scopus 로고    scopus 로고
    • A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of higly doped layers
    • Sept.
    • Cuscuna M., Bonfiglietti A., Carluccio R., Mariucci L., Mecarini F., Pecora A. Stanizzi M. Valetta A., Fortunato G.: A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of higly doped layers; Solid-State Electronics, vol.46,no.9,Sept. 2002, pp1351-8
    • (2002) Solid-state Electronics , vol.46 , Issue.9 , pp. 1351-1358
    • Cuscuna, M.1    Bonfiglietti, A.2    Carluccio, R.3    Mariucci, L.4    Mecarini, F.5    Pecora, A.6    Stanizzi, M.7    Valetta, A.8    Fortunato, G.9
  • 2
    • 0037107058 scopus 로고    scopus 로고
    • 2O vapor heat treatment used to fabricate poly-Si thin film transistors
    • Part2, No 9A/B 15 Sept.2002
    • 2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors; JPN. J. Appl. Phys. Vol. 41 (2002) pp. L974-L977 Part2, No 9A/B 15 Sept.2002
    • (2002) JPN. J. Appl. Phys. , vol.41
    • Watakabe, H.1    Sameshima, T.2
  • 3
    • 32244444439 scopus 로고    scopus 로고
    • Single area laser crystallization for the fabrication of bottom gate and top gate TFTs
    • 19th IDRC Proceedings
    • Harrer T.,Maresch S., Merkle T.,Lueder E.,Stehle M., Zahorski D., Prat C.: Single Area Laser Crystallization for the fabrication of Bottom Gate and Top Gate TFTs; Euro Display 99, 19th IDRC Proceedings, 1999, pp57-60
    • (1999) Euro Display 99 , pp. 57-60
    • Harrer, T.1    Maresch, S.2    Merkle, T.3    Lueder, E.4    Stehle, M.5    Zahorski, D.6    Prat, C.7
  • 5
    • 0034453366 scopus 로고    scopus 로고
    • A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing
    • Jae-Hong Jeon, Min-Cheol Lee, Kee-Chan Park, SangHoon Jung, Min-Koo Han: A New Poly-Si TFT with Selectively Doped Channel Fabricated by Novel Excimer Laser Annealing; IEDM 2000, pp213-216
    • IEDM 2000 , pp. 213-216
    • Jeon, J.-H.1    Lee, M.-C.2    Park, K.-C.3    Jung, S.4    Han, M.-K.5
  • 6
    • 0033164973 scopus 로고    scopus 로고
    • Electrical characteristics of new structure tolerant to process misalignment
    • July
    • Min B-H., Kanicki J.:Electrical Characteristics of New Structure Tolerant to Process Misalignment; IEEE Electron device Letters, Vol.20 No.7,July 1999, pp335-337
    • (1999) IEEE Electron Device Letters , vol.20 , Issue.7 , pp. 335-337
    • Min, B.-H.1    Kanicki, J.2
  • 7
    • 0011180618 scopus 로고    scopus 로고
    • Passive and active matrix addressed polymer light emitting diode displays
    • Ton van de Biggelaar, Nigel D. Young et al: Passive and active matrix addressed polymer light emitting diode displays; Proceedings of SPIE Vol. 4295 (2001), pp 134-146
    • (2001) Proceedings of SPIE , vol.4295 , pp. 134-146
    • Van Biggelaar, T.D.1    Young, N.D.2
  • 8
    • 2642574312 scopus 로고    scopus 로고
    • Incomplete laser annealing of ion doping damage at source/drain junctions of poly-Si thin-film transistors
    • Park K-C., Nam W-J.,Kang S-H., Han M-K.: Incomplete Laser Annealing of Ion Doping Damage at Source/Drain Junctions of Poly-Si Thin-Film Transistors; Electrochemical and Solid-State Letters,7,(6) G116-G118 (2004)
    • (2004) Electrochemical and Solid-state Letters , vol.7 , Issue.6
    • Park, K.-C.1    Nam, W.-J.2    Kang, S.-H.3    Han, M.-K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.