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Applied Physics A: Materials Science and Processing

Volumn 83, Issue 1, 2006, Pages 53-56

Electronic transport characteristic of an individual CNx/C nanotube Schottky junction

(9) Xiao, K a Liu, Y Q a Hu, P A a Yu, G a Hu, W P a Zhu, D B a Liu, X Y b Liu, H M b Wu, D X b

a INSTITUTE OF CHEMISTRY (China)

b INSTITUTE OF MICROELECTRONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES;

CURRENT-VOLTAGE; IDEAL FACTORS; POWER LAWS; TRAP STATE;

CARBON NANOTUBES;

EID: 32144450492 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-005-3474-z Document Type: Article

Times cited : (11)

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