High performance field-effect transistors made of a multiwall CN x/C nanotube intramolecular junction

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4824-4826

  Xiao, Kai ^a   Liu, Yunqi ^a   Hu, Ping'an ^a   Yu, Gui ^a   Fu, Lei ^a   Zhu, Daoben ^a  

^a INSTITUTE OF CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ION BEAMS; NITROGEN; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SYNTHESIS (CHEMICAL); TRANSCONDUCTANCE;

INTRAMOLECULAR JUNCTIONS; MULTIWALLED NANOTUBES;

FIELD EFFECT TRANSISTORS;

EID: 0348197037     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633015     Document Type: Article

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