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Volumn 23, Issue 1, 2006, Pages 20-29

MOSFET mismatch modeling: A new approach

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DESIGN FOR TESTABILITY; MATHEMATICAL MODELS; SYSTEMS ANALYSIS; TRANSISTORS;

EID: 32144438124     PISSN: 07407475     EISSN: None     Source Type: Journal    
DOI: 10.1109/MDT.2006.20     Document Type: Article
Times cited : (16)

References (14)
  • 1
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    • Dec.
    • J.-B. Shyu, G.C. Temes, and F. Krummenacher, "Random Error Effects in Matched MOS Capacitors and Current Sources," IEEE J. Solid-State Circuits, vol. 19, no. 6, Dec. 1984, pp. 948-955.
    • (1984) IEEE J. Solid-State Circuits , vol.19 , Issue.6 , pp. 948-955
    • Shyu, J.-B.1    Temes, G.C.2    Krummenacher, F.3
  • 4
    • 0002757134 scopus 로고    scopus 로고
    • "The Dirty Little Secret: Engineers at Design Forum Vexed by Rise in Process Variations at the Die Level"
    • 25 Mar.
    • R. Wilson, "The Dirty Little Secret: Engineers at Design Forum Vexed by Rise in Process Variations at the Die Level," EE Times, 25 Mar. 2002, p. 1.
    • (2002) EE Times , pp. 1
    • Wilson, R.1
  • 5
    • 0016538539 scopus 로고
    • "Effect of Randomness in the Distribution of Impurity Ions on FET Thresholds in Integrated Electronics"
    • Aug.
    • R.W. Keyes, "Effect of Randomness in the Distribution of Impurity Ions on FET Thresholds in Integrated Electronics," IEEE J. Solid-State Circuits, vol. 10, no. 4, Aug. 1975, pp. 245-247.
    • (1975) IEEE J. Solid-State Circuits , vol.10 , Issue.4 , pp. 245-247
    • Keyes, R.W.1
  • 6
    • 0033872616 scopus 로고    scopus 로고
    • "Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFETs with Ultrathin Gate Oxide"
    • Apr.
    • A. Asenov and S. Saini, "Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFETs with Ultrathin Gate Oxide," IEEE Trans. Electron Devices, vol. 47, no. 4, Apr. 2000, pp. 805-812.
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.4 , pp. 805-812
    • Asenov, A.1    Saini, S.2
  • 7
    • 0034466169 scopus 로고    scopus 로고
    • "Impact of Model Errors on Predicting Performance of Matching-Critical Circuits"
    • IEEE Press
    • M.-F. Lan and R. Geiger, "Impact of Model Errors on Predicting Performance of Matching-Critical Circuits," Proc. 43rd IEEE Midwest Symp. Circuits and Systems, IEEE Press, 2000, vol. 3, pp. 1324-1328.
    • (2000) Proc. 43rd IEEE Midwest Symp. Circuits and Systems , vol.3 , pp. 1324-1328
    • Lan, M.-F.1    Geiger, R.2
  • 8
    • 0242332714 scopus 로고    scopus 로고
    • "Current Mismatch Due to Local Dopant Fluctuations in MOSFET Channel"
    • Nov.
    • H. Yang et al., "Current Mismatch Due to Local Dopant Fluctuations in MOSFET Channel," IEEE Trans. Electron Devices, vol. 50, no. 11, Nov. 2003, pp. 2248-2254.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.11 , pp. 2248-2254
    • Yang, H.1
  • 9
    • 0042527394 scopus 로고    scopus 로고
    • "A Compact Model for Flicker Noise in MOS Transistors for Analog Circuit Design"
    • Aug.
    • A. Arnaud and C. Galup-Montoro, "A Compact Model for Flicker Noise in MOS Transistors for Analog Circuit Design," IEEE Trans. Electron Devices, vol. 50, no. 8, Aug. 2003, pp. 1815-1818.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.8 , pp. 1815-1818
    • Arnaud, A.1    Galup-Montoro, C.2
  • 11
    • 4143061525 scopus 로고    scopus 로고
    • "15 nm Gate Length Planar CMOS Transistor"
    • IEEE Press, Dec.
    • B. Yu et al., "15 nm Gate Length Planar CMOS Transistor," Proc. Int'l Electron Devices Meeting, IEEE Press, Dec. 2001, pp. 11.7.1-11.7.3.
    • (2001) Proc. Int'l Electron Devices Meeting
    • Yu, B.1
  • 12
    • 0037346346 scopus 로고    scopus 로고
    • "Understanding MOSFET Mismatch for Analog Design"
    • Mar.
    • P.G. Drennan and C.C. McAndrew, "Understanding MOSFET Mismatch for Analog Design," IEEE J. Solid-State Circuits, vol. 38, no. 3, Mar. 2003, pp. 450-456.
    • (2003) IEEE J. Solid-State Circuits , vol.38 , Issue.3 , pp. 450-456
    • Drennan, P.G.1    McAndrew, C.C.2
  • 13
    • 4344664589 scopus 로고    scopus 로고
    • "Consistent Model for Drain Current Mismatch in MOSFETs Using the Carrier Number Fluctuation Theory"
    • IEEE Press
    • H. Klimach et al., "Consistent Model for Drain Current Mismatch in MOSFETs Using the Carrier Number Fluctuation Theory," Proc. IEEE Int'l Symp. Circuits and Systems, IEEE Press, 2004, vol. 5, pp. 113-116.
    • (2004) Proc. IEEE Int'l Symp. Circuits and Systems , vol.5 , pp. 113-116
    • Klimach, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.