Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

Journal of Magnetism and Magnetic Materials

Volumn 239, Issue 1-3, 2002, Pages 120-122

  Lee, K I ^a   Lee, J H ^a   Lee, W Y ^a   Rhie, K W ^b   Ha, J G ^c   Kim, C S ^d   Shin, K H ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Kwangwoon University   (South Korea)

^d Hynix Semiconductor Inc   (South Korea)

Author keywords

Magnetic tunnel junction; Rapid thermal anneal; Thermal stability; Tunneling magnetoresistance

Indexed keywords

ALUMINUM COMPOUNDS; INTERFACES (MATERIALS); MAGNETORESISTANCE; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

TUNNEL JUNCTIONS;

EID: 0036465356     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00580-7     Document Type: Article

References (6)