Failure analysis of InGaAs/GaAs strained-layer quantum-well lasers using a digital OBIC monitor

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 211-217

  Takeshita, Tatsuya ^a   Sugo, Mitsuru ^a   Sasaki, Toru ^a   Tohmori, Yuichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Aging; Failure analysis; Indium compounds; Photon beams; Quantum well lasers; Reliability; Ridge waveguides; Semiconductor lasers

Indexed keywords

AGING OF MATERIALS; FAILURE ANALYSIS; OPTICAL DEVICES; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDES;

CATASTROPIC OPTICAL DAMAGE (COD); OPTICAL BEAM-INDUCED CURRENT (OBIC); RIDGE WAVEGUIDES; STRAINED-LAYER QUANTUM-WELL LASERS;

QUANTUM WELL LASERS;

EID: 31744443515     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862238     Document Type: Article

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