A circular beam spot and low threshold current laser diode with reverse-V-shape layer

IEEE Journal of Quantum Electronics

Volumn 37, Issue 12, 2001, Pages 1636-1642

  Takeshita, Tatsuya ^b   Shibata, Yasuo ^b   Ito, Toshio ^b   Sakai, Yoshihisa ^b   Okamoto, Minoru ^a,b   Tohmori, Yuichi ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

Author keywords

Bulk active layer; Circular beam; Indium devices; Low threshold current; Semiconductor lasers

Indexed keywords

LASER BEAMS; LIGHT SOURCES; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS;

CIRCULAR BEAMS; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0035686485     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.970911     Document Type: Article

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