Excellent cross-talk isolation, high-Q inductors, and reduced self-heating in a TFSOI technology for system-on-a-chip applications

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 584-589

  Kumar, Mahender ^a,b   Tan, Yue ^a,b   Sin, Johnny K O ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Cross talk isolation; Mixed signal; Radio frequency integrated circuits (RFICs); Self heating; System on a chip; Thin film silicon on insulator (TFSOI)

Indexed keywords

THIN-FILM SILICON-ON-INSULATOR (TFSOI) TECHNOLOGY;

CROSSTALK; ELECTRIC INDUCTORS; FREQUENCIES; PROBES; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THIN FILMS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036540437     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992866     Document Type: Article

References (12)

1. Wireless communications devices and technology: Future directions
2. Single chip wireless systems using SOI
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4. A SOI-RF-CMOS technology on high resistivity SIMOX substrate for microwave applications to 5 GHz
5. A simple approach to modeling cross-talk in integrated circuits
6. Substrate cross-talk reduction using SOI technology
7. On-chip spiral inductors with diffused shields using channel-stop implants
8. On-chip spiral inductors with patterned ground shields for Si-based RF ICs
9. Measurement and modeling of self-heating in SOI NMOSFETs
10. Self-heating effect in lateral DMOS on SOI
11. Impact of self-heating and thermal coupling on analog circuits in SOI CMOS
12. A simple, high performance complementary TFSOI BiCMOS technology with excellent cross-talk isolation and high-Q inductors for low power wireless applications