High-rate glass etching process for transferring polycrystalline silicon thin-film transistors to flexible substrates

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 3, 2005, Pages 384-389

  Takechi, K ^a   Eguchi, T ^a   Kanoh, H ^b   Ito, T ^c   Otsuki, S ^a  

^a Technology Research Association for Advanced Display Materials TRADIM   (Japan)

^b NEC CORPORATION   (Japan)

^c Sumitomo Bakelite Company Ltd ^*  (Japan)

Author keywords

Flexible substrate; Glass etching; Kinetic etching model; Polycrystalline silicon thin film transistor; Transfer process

Indexed keywords

ANNEALING; GLASS; HYDROCHLORIC ACID; HYDROFLUORIC ACID; ISOTHERMS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; PLASTICS; POLYSILICON; THIN FILM TRANSISTORS;

FLEXIBLE SUBSTRATES; GLASS ETCHING; KINETIC ETCHING MODEL; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; TRANSFER PROCESS;

ETCHING;

EID: 25144525003     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.852102     Document Type: Article

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