Optical and structural properties of InGaN epilayers with very high indium content

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 292-297

  Bayliss, S C ^a   Demeester, P ^b   Fletcher, I ^a   Martin, R W ^c   Middleton, P G ^c   Moerman, I ^b   O'Donnell, K P ^c   Sapelkin, A ^a   Trager Cowan, C ^c   Van Der Stricht, W ^b   Young, C ^c  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b GHENT UNIVERSITY   (Belgium)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

CATHODOLUMINESCENCE IMAGING; EPILAYERS; INDIUM GALLIUM NITRIDE; X RAY ABSORPTION FINE STRUCTURE;

NITRIDES;

EID: 0033528908     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00358-4     Document Type: Article

References (6)

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4. K.P. O'Donnell, R.W. Martin, P.G. Middleton, S.C. Bayliss, I. Fletcher, W Van der Stricht, P. Demeester, I. Moerman, Mat. Sci. Eng. B (this vol.).
5. K.P. O'Donnell, P.G. Middleton, C. Trager-Cowan, C. Yeung, S.C. Bayliss, I. Fletcher, W. Van der Stricht, I. Moerman, P. Demeester, Appl. Phys. Letts. (in press).
6. Blant A.V., Cheng T.S., Jeffs N.J., Foxon C.T., Bailey C., Harrison P.G., Dent A.J., Mosselmans J.F.W. Mat. Sci. Eng. B. 50:1997;38.