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Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

Electron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer

(8) Callegari, A a Jamison, P a Neumayer, D a Feely, F Mc a Shepard, J b Andreoni, W c Curioni, A c Pignedoli, C c

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM RESEARCH (United States)

c IBM RESEARCH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; INTERFACIAL LAYERS; INVERSION LAYER THICKNESS; LEAKAGE REDUCTION;

ANNEALING; DIELECTRIC DEVICES; ELECTRIC VARIABLES MEASUREMENT; HAFNIUM COMPOUNDS; INTERFACIAL ENERGY; LEAKAGE CURRENTS; PHONONS; POTASSIUM; SILICON; THERMAL EFFECTS; TUNGSTEN COMPOUNDS;

ELECTRON MOBILITY;

EID: 31644432008 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2163980 Document Type: Article

Times cited : (7)

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