Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7723-7725

  Hsueh, Tao Hung ^a   Sheu, Jinn Kong ^a,b   Huang, Hung Wen ^a   Chang, Ya Hsien ^a   Ou Yang, Miao Chia ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Inductively coupled plasma (ICP); Micro photoluminescence; MQWs; Nanorods

Indexed keywords

INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTOR QUANTUM WELLS;

MICRO-PHOTOLUMINESCENCE; NANORODS;

INDIUM COMPOUNDS;

EID: 31544482680     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7723     Document Type: Article

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