Development of high purity one ATM ozone source - Its application to ultratuin SiO2 film formation on Si substrate

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 121-126

  Koike, Kunihiko ^a   Inoue, Goichi ^a   Ichimura, Shingo ^b   Nakamura, Ken ^b   Kurokawa, Akira ^b   Nonaka, Hidehiko ^b  

^a Iwatani International Corporation   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CONDENSATION; DENSITY MEASUREMENT (SPECIFIC GRAVITY); DESORPTION; FILM PREPARATION; GAS GENERATORS; LOW TEMPERATURE OPERATIONS; OXIDATION; OZONE; SILICA; SILICA GEL; TEMPERATURE;

HIGH CONCENTRATION OZONE GENERATOR; OXIDATION POWER; THERMAL OXIDATION;

ULTRATHIN FILMS;

EID: 0033355951     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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