Investigation of the divided deposition method of TiN thin films for metal-insulator-metal capacitor applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7765-7769

  Okudaira, Tomonori ^a   Hayashi, Takeshi ^a   Sakashita, Shinsuke ^a   Tsuchimoto, Junichi ^a   Kobayashi, Kiyoteru ^a,b   Yoneda, Masahiro ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Divided deposition method; Low temperature deposition; MIM capacitor; Ta2O5; TiN CVD

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRODES; EMBEDDED SYSTEMS; RANDOM ACCESS STORAGE; TITANIUM NITRIDE;

LOW-TEMPERATURE DECOMPOSITION; MIM CAPACITOR; TIN CVD;

THIN FILMS;

EID: 31544454682     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7765     Document Type: Article

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