Novel storage-node contacts with stacked point-cusp magnetron Sp-TiN barrier for metal-insulator-metal Ru/Ta2O5/Ru capacitors in gigabit dynamic random access memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3315-3319

  Kawagoe, Tsuyoshi ^a   Nakamura, Yoshitaka ^a   Kuroki, Keiji ^a   Asano, Isamu ^a   Goto, Hidekazu ^a   Nakanishi, Naruhiko ^a  

^a Elpida Memory Inc   (Japan)

Author keywords

Barrier; Capacitor; DRAM; Gigabit; MIM; PCM sputtering; Ru; Stacked barrier structure; Ta2o5; Ti N ratio; TiN

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; RUTHENIUM; TANTALUM COMPOUNDS; TITANIUM NITRIDE;

BARRIER; GIGABIT; POINT-CUSP MAGNETRON (PCM) SPUTTERING; STACKED BARRIER STRUCTURE;

MIM DEVICES;

EID: 4344694122     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3315     Document Type: Article

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