High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS

Current Applied Physics

Volumn 3, Issue 1, 2003, Pages 9-11

  Kimura, Kenji ^a   Oota, Yukitoshi ^a   Nakajima, Kaoru ^a   Büyüklimanli, Temel H ^b  

^a KYOTO UNIVERSITY   (Japan)

^b Evans East Inc   (United States)

Author keywords

Boron profiling; High resolution; RBS; Ultrashallow implantation

Indexed keywords

EID: 0037319539     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1567-1739(02)00227-4     Document Type: Article

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