High-temperature characteristics of strain in AlGaN/GaN heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 18-20

  Chen, Dunjun ^a   Shen, Bo ^b   Zhang, Kaixiao ^a   Tao, Yaqi ^a   Xiaoshan, W U ^a   Jing, X U ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

AlGaN GaN heterostructures; High temperature; Strain relaxation

Indexed keywords

GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; X RAY DIFFRACTION ANALYSIS;

ALGAN/GAN HETEROSTRUCTURES; HIGH TEMPERATURE; STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 31544431755     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.18     Document Type: Article

References (12)

1. N. Maeda, K. Tsubaki, T. Saitoh and N. Kobayashi: Appl. Phys. Lett. 79 (2001) 1634.
2. T. Egawa, H. Ishikawa, M. Umeno and T. Jimbo: Appl. Phys. Lett. 76 (2000) 121.
3. N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida and N. Kobayashi: Jpn. J. Appl. Phys. 38 (1999) L987.
4. B. Shen, T. Someya and Y. Arakawa: Appl. Phys. Lett. 76 (2000) 2746.
5. R. R. Reeber and K. Wang: MRS Internet J. Nitride Semicond. Res. 6 (2001) 1.
6. M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski and T. D. Moustakas: J. Appl. Phys. 76 (1994) 4909.
7. G. A. Slack and S. F. Bartram: J. Appl. Phys. 46 (1975) 89.
8. W. M. Yim and R. J. Paff: J. Appl. Phys. 45 (1974) 1456.
9. G. Steude, B. K. Meyer, A. Golder, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano and I. Akasaki: Jpn. J. Appl. Phys. 38 (1999) L498.
10. R. Beresford, C. Lynch and E. Chason: J. Cryst. Growth 251 (2003) 106.
11. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck: J. Appl. Phys. 85 (1999) 3222.
12. N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng and T. D. Moustakas: J. Appl. Phys. 83 (1998) 3656.