Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 106-111

  Beresford, R ^a   Lynch, C ^a   Chason, E ^a  

^a Brown University   (United States)

Author keywords

A1. Line defects; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; SURFACE ROUGHNESS;

STRAIN RELAXATION;

MOLECULAR BEAM EPITAXY;

EID: 0037382691     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02376-X     Document Type: Conference Paper

References (11)

1. Chason E., Floro J.A. Mater. Res. Soc. Proc. 428:1996;499
2. Floro J.A., Chason E., Lee S.R., Twesten R.D., Quang R.Q., Freund L.B. J. Electron. Mater. 26:1997;969.
3. Beresford R., Yin J., Tetz K., Chason E. J. Vac. Sci. Technol. B. 18:2000;1431
4. Beresford R., Tetz K., Yin J., Chason E., González M.U. J. Vac. Sci. Technol. B. 19:2001;1572.
5. Dodson B.W., Tsao J.Y. Appl. Phys. Lett. 51:1987;1325.
6. Tsao J.Y., Dodson B.W., Picraux S.T., Cornelison D.M. Phys. Rev. Lett. 59:1987;2455.
7. Yonenaga I. J. Phys. III France. 7:1997;1435.
8. Dunstan D.J. J. Mater. Sci. Mater. El. 8:1997;337.
9. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
10. Freund L.B. J. Appl. Phys. 68:1990;2073.
11. Whaley G.J., Cohen P.I. Appl. Phys. Lett. 57:1990;144.