Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 738-746

  Mkhoyan, K A ^a   Kirkland, E J ^a   Silcox, J ^a   Alldredge, E S ^b  

^a Department of Obstetrics Gynecology   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNULAR DARK FIELD (ADF); BEAM BROADENING; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM); STRAIN INDUCED EFFECTS;

ALUMINUM NITRIDE; COMPOSITION; COMPUTER SIMULATION; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3142776693     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756222     Document Type: Article

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