Near-edge conduction band electronic states in SiGe alloys

Journal of Electron Microscopy

Volumn 49, Issue 2, 2000, Pages 267-273

  Batson, Philip E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Conduction band; EELS; Electronic structure; Semiconductors; STEM

Indexed keywords

ENERGY DISSIPATION; SEMICONDUCTOR QUANTUM WELLS; SILICON;

BANDS EDGES; CONDUAIA BAND; ELEARON ENERGY LOSS SPEAROSCOPY; ELEARONIC STRUAURE; QUANTUM-WELLS; SEMICONDUAOR; SPATIALLY RESOLVED; SPLITTINGS; STEM; TWO-COMPONENT;

SI-GE ALLOYS;

EID: 0034013425     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023806     Document Type: Article

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