Molecular beam epitaxial growth of AlN/GaN multiple quantum wells

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 375-380

  Wu, Hong ^a   Schaff, William J ^a   Koley, Goutam ^a   Furis, Madalina ^b   Cartwright, A N ^b   Mkhoyan, Karen A ^a   Silcox, John ^a   Henderson, Walter ^c   Doolittle, W Alan ^c   Osinsky, A V ^d  

^a Cornell University   (United States)

^b the State University of New York   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d Science and Technol Corning Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SAPPHIRE; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; LIGHT EMITTER; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM CASCADE LASER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037696038     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l6.2     Document Type: Conference Paper

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