Field-effect transistor made with a sexithiophene single crystal

Advanced Materials

Volumn 8, Issue 1, 1996, Pages 52-54

  Horowitz, Gilles ^a   Garnier, Francis ^a   Yassar, Abderrahim ^a   Hajlaoui, Riadh ^a   Kouki, Fayçal ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; FABRICATION; FIELD EFFECT TRANSISTORS; PERFORMANCE; SINGLE CRYSTALS; SULFUR COMPOUNDS; X RAY DIFFRACTION;

CURRENT VOLTAGE MEASUREMENT; DOPANT CONCENTRATION; FIELD EFFECT MOBILITY; ORGANIC TRANSISTOR; SEXITHIOPHENE;

OLIGOMERS;

EID: 0029762547     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.19960080109     Document Type: Article

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