Electronic structure of GaP1-xNx alloys determined using pseudopotentials and Gaussian orbitals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5602-5606

  Nakajima, Sadanojo ^a   Ohshiba, Hidenori ^a   Yang, Tao ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Band gap; Energy band structure; GaPN; III V nitride semiconductors; Pseudopotential

Indexed keywords

BAND GAP; GALLIUM NITRIDE; GALLIUM PHOSPHIDE; GAUSSIAN ORBITAL; PSEUDOPOTENTIAL; VIRTUAL CRYSTAL APPROXIMATION;

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; CRYSTAL SYMMETRY; ENERGY GAP;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030291159     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5602     Document Type: Article

References (18)

1. J. N. Baillargeon, K. Y. Cheng, G. E. Hofler, P. J. Pearah and K. C. Hsieh: Appl. Phys. Lett. 60 (1992) 2540.
2. S. Miyoshi, H. Yaguchi, K. Onabe, Y. Shiraki and R. Ito: Ext. Abstr. 40th Spring Meet., 1993, The Japan Society of Applied Physics and Related Societies, No. 1, p. 347 [in Japanese].
3. S. Sakai, Y. Ueta, and Y. Terauchi: Jpn. J. Appl. Phys. 32 (1993) 4413.
4. S. Miyoshi and K. Onabe: Topical Workshop on III-V Nitrides (1995) P-1.
5. E. O. Kane: Phys. Rev. B 13 (1976) 3478.
6. D. J. Chadi: Phys. Rev. B 16 (1977) 3572.
7. A.-B. Chen and A. Sher: Phys. Rev. B 22 (1980) 3886.
8. M. L. Cohen and T. K. Bergstresser: Phys. Rev. 141 (1966) 789.
9. J. R. Chelikowsky and M. L. Cohen: Phys. Rev. B 14 (1976) 556.
10. M. B. Sturge, R. T. Vink and F. P. J. Kuijpers: Appl. Phys. Lett. 32 (1978) 49.
11. D. D. Sell and P. Lawaetz: Phys. Rev. Lett. 26 (1971) 311.
12. D. J. Dean, G. Kaminsky and R. B. Zettersrom: J. Appl. Phys. 38 (1967) 3551.
13. M. J. Paisley, Z. Sitar, J. B. Posthill and R. F. Davis: J. Vac. Sci. Technol. A 7 (1989) 701.
14. Z. Sitar, M. J. Paisley, J. Ruan, J.W. Choyke and R. F. Davis: J. Mater. Sci. Lett. 11 (1992) 261.
15. A.-B. Chen and A. Sher: Phys. Rev. B 23 (1981) 5360.
16. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley and S. G. Louie: Phys. Rev. B 48 (1993) 11810.
17. S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, 1981).
18. T. Lei, T. D. Moustakas, R. J. Graham, Y. He and S. J. Berkowitz: J. Appl. Phys. 71 (1992) 4993, and references therein.