Growth of cubic boron nitride films on tungsten carbide substrates by direct current jet plasma chemical vapor deposition

Journal of Materials Research

Volumn 19, Issue 5, 2004, Pages 1408-1412

  Yu, J ^a   Matsumoto, S ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; DIFFUSION; ETCHING; FILM GROWTH; PHASE INTERFACES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRESS RELAXATION; SUBSTRATES; THERMAL EFFECTS; TUNGSTEN CARBIDE;

COBALT NITIRDE; DIRECT CURRENT JET PLASMA CHEMICAL VAPOR DEPOSITION; FILM QUALITY; GROWTH TEMPERATURE;

CUBIC BORON NITRIDE;

EID: 3142747747     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0188     Document Type: Article

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