Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 760-763

  Stief, R ^a   Lucassen, M ^a   Schork, R ^a   Ryssel, H ^a   Hoelzlein, K H ^a   Rupp, R ^a   Stephani, D ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHIZATION; BORON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); IMPURITIES; ION IMPLANTATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY;

ELECTRONIC STOPPING POWER;

SILICON CARBIDE;

EID: 0033309621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)