SiC substrate defects and III-N heteroepitaxy

Journal of Physics D: Applied Physics

Volumn 36, Issue 10 A, 2003, Pages

  Poust, B D ^a,b   Koga, T S ^a   Sandhu, R ^a,b   Heying, B ^b   Hsing, R ^b   Wojtowicz, M ^b   Khan, A ^c   Goorsky, M S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTALLOGRAPHY; DEPOSITION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SUBSTRATES;

ALUMINUM GALLIUM NITRIDE LAYERS; DOUBLE CRYSTAL REFLECTION X RAY TOPOGRAPHY; GALLIUM NITRIDE LAYERS; HETEROEPITAXY; SILICON CARBIDE SUBSTRATE;

CRYSTAL DEFECTS;

EID: 0037945698     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/10A/321     Document Type: Article

References (12)

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