Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 547-553

  Cheong, K Y ^a,b   Dimitrijev, S ^a   Han, J ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

A1. Charge retention time; A1. Effective generation rate; A1. Minority carrier lifetime; A1. Perimeter effect; A1. Surface generation lifetime; B1. Nitrided gate oxides

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CHARGE; GATES (TRANSISTOR); NITRIDES; NITROGEN OXIDES; SILICON CARBIDE; VOLTAGE MEASUREMENT;

EFFECTIVE GENERATION RATES; MINORITY-CARRIER LIFETIME; PERIMETER EFFECTS;

MOS CAPACITORS;

EID: 3142688276     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.089     Document Type: Conference Paper

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