Positron and positronium annihilation in low-dielectric-constant films studied by a pulsed positron beam

Materials Science Forum

Volumn 445-446, Issue , 2004, Pages 224-228

  Suzuki, R ^a   Ohdaira, T ^a   Kobayashi, Y ^a   Ito, K ^a   Yu, R S ^a   Shioya, Y ^b   Ichikawa, H ^c   Hosomi, H ^c   Ishikiriyama, K ^c   Shirataki, H ^d   Matsuno, S ^d   Xu, J ^e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Semiconductor Process Lab Co Ltd   (Japan)

^c TORAY RESEARCH CENTER INC   (Japan)

^d ASAHI KASEI CORPORATION   (Japan)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

AMOC; Diffusion of Ortho Positronium; Low Dielectric Constant; Low k; PALS; Plasma Enhanced Chemical Vapor Deposition; Porous Material; Positron Annihilation Lifetime Spectroscopy; Spin On Dielectric; Three Gamma Annihilation

Indexed keywords

CAPACITANCE; DIFFUSION; INTEGRATED CIRCUITS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SCINTILLATION COUNTERS; STRENGTH OF MATERIALS; THIN FILMS;

AGE-MOMENTUM CORRELATION (AMOC); DIFFUSION OF ORTHO-POSITRONIUM; LOW DIELECTRIC CONSTANT; LOW-K; POSITRON ANNIHILATION LIFETIME SPECTROSCOPY (PALS); SPIN-ON DIELECTRICS (SOD); THREE-GAMMA ANNIHILATION;

DIELECTRIC FILMS;

EID: 3142684766     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.445-446.224     Document Type: Conference Paper

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