Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC

Proceedings of the IASTED Multi-Conference- Power and Energy Systems

Volumn 7, Issue , 2003, Pages 313-316

  Hasanuzzaman, Md ^a   Islam, Syed K ^a,b   Tolbert, Leon M ^a,b   Ozpineci, Burak ^b  

^a University of Tennessee Knoxville   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Model verification; Power device; SiC; Vertical DIMOS

Indexed keywords

DRIFT VELOCITY; MELTING POINT;

COMPUTER SIMULATION; GEOMETRY; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; MOS DEVICES; PARAMETER ESTIMATION; SILICON CARBIDE; SWITCHING CIRCUITS;

TRANSISTORS;

EID: 1542433858     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)

1. M. Bhataagar and B.J. Baliga, "Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices," IEEE Trans. on Electron Devices, 40(3), pp. 645-655, March 1993.
2. K. Shenai, R.S. Scott and B.J. Baliga, "Optimum Semiconductors for High Power Electronics," IEEE Trans. on Electron Devices, 36(9), pp. 1811-1823, September. 1989.
3. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, "Large-band-gap SiC, III-V Nitride, and II-V ZnSe-based Semiconductor Device Technologies," Journal of Applied Physics, 76 (3), pp. 1363-1397, 1 August 1994.
4. C. Weitzel, J. palmour, C. Carter, K. Moore, K. Nordquist, S. Allen, C. Thero, and Bhatnagar, "Silicon Carbide High-Power Devices", IEEE Trans. on Electron Devices, 43(10), pp. 1732-1741, October 1996.
5. A. Itoh, T. Kimoto, and H. Matsunami, "Excellent Reverse Blocking Characteristics of High-Voltage 4H-SiC Schottky Rectifiers with Boron-Implanted Edge Termination," IEEE Electron Devices Letters, no. 17, pp. 139-141, 1996.
6. Y. Sugawara, K.Asano, R. Singh, and J.W. Palmour, "6.2 kV 4H-SiC pin Diode with Low Forward Voltage Drop", Material Science Forum, vols. 338-342, pp. 1371-1374, 2000.
7. D.B. Slater, "Development of a high temperature SiC CMOS Technology", SBIR abstract, Cree Research, Inc. Durham, NC, 1997.
8. J.N. Shenoy, J.A.Cooper, and M.R. Melloch, "High-Voltage Double-Implanted Power MOSFET's in 6H-SiC," IEEE Electron Devices Letters, vol. 18, no. 3, pp. 93-95. 1997.
9. Md Hasanuzzaman and Syed K. Islam, "Analytical Modeling of Vertical Double-Implanted Power MOSFET (DIMOS) in 4H-SiC," Proceedings of Conneticut Symposium on Microelectronics & Optoelectronics, Connecticut, March 2002.
10. Burak Ozpineci, Leon M. Tolbert, Syed K. Islam, Tim J. Theiss, "A Parametric Device Study for SiC Diodes in Vehicular Applications," Proceedings of IEEE Vehicular Technology Conference (VTC02), Vancouver, Canada. September 24-29, 2002, pp. 1495-1499.
11. B.J. Baliga, "Trends in Power Semiconductor Devices," IEEE Trans. On Electron Devices, 43(10), pp. 1717-1731, October 1996.
12. D.A. Grant and J. Gower, Power MOSFETs: Theory and Application, John Wiley & Sons, New York 1989, pp. 377-382.
13. Krishna Shenai, "Effect of P-Base Sheet and Contact Resistances on Static Current-Voltage Characteristics of Scaled Low-Voltage Vertical Power DMOSET's," IEEE Electron Devices Letters, no. 6, pp. 270-272, 1991.
14. M. Darwish, "Study of the Quasi-Saturation Effect in VDMOS Transistors," IEEE Trans. on Electron Devices, vol. ED-33, no.11, pp. 1710-1716, 1986.
15. M. Andersson and P. Kuivalainen, "Physical Modelling of Vertical DMOS Power Transistors for Circuit Simulation," Physica Scripta. Vol. T54, pp. 157-158, 1994.