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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5610-5614

Theoretical stability of polarization in metal/ferroelectric/insulator/semiconductor and related structures

(2) Watanabe, Y a Masuda, A a

a KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Ferroelectric; FET; MFIS; Retention; Theory; Transistor

Indexed keywords

DIELECTRIC RELAXATION; ENERGY GAP; FERROELECTRIC DEVICES; MISFET DEVICES; POLARIZATION; QUANTUM THEORY; THERMODYNAMICS;

QUANTUM CONFINEMENT EFFECT;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035455534 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.5610 Document Type: Article

Times cited : (31)

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