A significant improvement in memory retention of metal-ferroelectric-insulator-semiconductor structure for one transistor-type ferroelectric memory by rapid thermal annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2055-2058

  Noda, Minoru ^a   Kodama, Kazushi ^a   Ikeuchi, Itaru ^a   Takahashi, Mitsue ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

MFIS structure; Pulsed laser deposition (PLD); Rapid thermal annealing (RTA); Silicon oxynitride (SiON); SrBi2Ta2O9 (SBT)

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; GRAIN SIZE AND SHAPE; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; FERROELECTRIC MEMORY; LEAKAGE CURRENT DENSITY; MEMORY RETENTION; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0038686500     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2055     Document Type: Article

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