Release layers for contact and imprint lithography

Semiconductor International

Volumn 25, Issue 6, 2002, Pages 71-80

  Resnick, Douglas J ^a   Mancini, David P ^a   Sreenivasan, S V ^b   Willson, C Grant ^b  

^a MOTOROLA INC   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPRINT LITHOGRAPHY; NEXT GENERATION LITHOGRAPHY (NGL); PHASE SHIFT MASKS (PSM); PRINTING PROCESSES;

COPOLYMERIZATION; CRYSTALLINE MATERIALS; DEFECTS; DURABILITY; INTERFACIAL ENERGY; LUBRICANTS; MANUFACTURE; MONOMERS; PHOTOLITHOGRAPHY; PHOTORESISTORS; PRINTERS (COMPUTER); PRINTING; PROJECTION SYSTEMS; THERMODYNAMIC STABILITY;

LITHOGRAPHY;

EID: 3142619681     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (15)

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