Thermal expansion coefficients of nano-clustering silica (NCS) films measured by X-ray reflectivity and substrate curvature methods

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 5 A, 2004, Pages

  Suzuki, Takashi ^a   Sugiura, Iwao ^a   Sato, Shigeo ^b   Nakamura, Tomoji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NISSAN ARC LTD   (Japan)

Author keywords

Cu interconnects; Iow k dielectric; Nano clusterlng silica; Substrate curvature method; Thermal expansion coefficient; X ray reflectivity method

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; METALLIZING; NANOSTRUCTURED MATERIALS; OXIDATION; POISSON RATIO; RESIDUAL STRESSES; THERMAL EXPANSION;

CU INTERCONNECTS; LOW-K DIELECTRICS; NANO-CLUSTERING SILICA (NCS); SURFACE CURVATURE METHOD; THERMAL COEFFICIENT EXPANSION (CTE); X-RAY REFLECTIVITY;

SILICA;

EID: 3142601317     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l614     Document Type: Article

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