Stress induced failure analysis by stress measurements in copper dual damascene interconnects

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 229-230

  Suzuki, T ^a   Ohtsuka, S ^a   Yamanoue, A ^a   Hosoda, T ^a   Khono, T ^a   Matsuoka, Y ^a   Yanai, K ^a   Matsuyama, H ^a   Mori, H ^a   Shimizu, N ^a   Nakamura, T ^a   Sugatani, S ^a   Shono, K ^a   Yagi, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION; INTEGRATED CIRCUIT INTERCONNECTS; X RAY DIFFRACTION;

DUAL DAMASCENE INTERCONNECTS; FAILURE RATE; MULTI LEVEL INTERCONNECTS; STRESS DIFFERENCE; STRESS MIGRATION; STRESS-INDUCED FAILURES; STRUCTURAL PARAMETER;

FAILURE ANALYSIS;

EID: 84961714965     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014942     Document Type: Conference Paper

References (2)

1. S-H.Rhee, Y.Du, and P.S.Ho, Proc. of 2001 IITC, P89.
2. T.Hosoda, H.Niwa, H.Yagi, and H.Tsuchikawa, Proc.22nd Rel.Phys.Symp. (IEEE, Las Vegas, 1991), p77.