Mitigation of low outgassing and small line edge roughness for EUVL resist

Journal of Photopolymer Science and Technology

Volumn 17, Issue 3, 2004, Pages 361-366

  Watanabe, Takeo ^a   Kinoshita, Hiroo ^a   Hamamoto, Kazuhiro ^a   Hada, Hideo ^b   Komano, Hiroshi ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b TOKYO OHKA KOGYO CO LTD   (Japan)

Author keywords

Chemically amplified resist; EUVL; Hyodrocarbon; Line edge roughness; Outgassing; Solvents effect

Indexed keywords

ACETATE MONOMETHYL ETHER; CARBON; CYCLOHEXANONE; HYDROCARBON; LACTIC ACID ETHYL ESTER; METHACRYLIC ACID; METHYL 3 METHOXYPROPIONATE; METHYL AMYLKETONE; MOLYBDENUM; N BUTYL ACETATE; OXYGEN; POLYHYDROXYSTYRENE; POLYSTYRENE; PROPYLENE GLYCOL; RESIN; SILICON; SOLVENT; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL STRUCTURE; CONTAMINATION; DECOMPOSITION; EXTREME ULTRAVIOLET LITHOGRAPHY; GAS; MASS SPECTROMETRY; PRESSURE; ROUGHNESS; SEMICONDUCTOR; SURFACE PROPERTY; TECHNOLOGY; THICKNESS; ULTRAVIOLET IRRADIATION; VACUUM;

EID: 3142586895     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.17.361     Document Type: Article

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