|
Volumn 22, Issue 3, 2004, Pages 650-654
|
Electron backscattered diffraction study of poly-Si by Ni-mediated crystallization of amorphous silicon using a SiO2 nanocap
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BACKSCATTERING;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL ORIENTATION;
CRYSTALLIZATION;
ELECTRON DIFFRACTION;
GRAIN BOUNDARIES;
GRAIN GROWTH;
GRAIN SIZE AND SHAPE;
NANOSTRUCTURED MATERIALS;
PLASMAS;
POLYCRYSTALLINE MATERIALS;
SUBSTRATES;
CRYSTALLINITY LEVELS;
ELECTRON BACKSCATTERED DIFFRACTION (EBSD);
NANOCAP LAYERS;
OXYGEN PLASMAS;
AMORPHOUS SILICON;
|
EID: 3142583520
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1714886 Document Type: Article |
Times cited : (9)
|
References (17)
|