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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1886-1890

Cross-hatch related oxidation and its impact on performance of strained-Si MOSFETs

(4) Nishisaka, Mika a Hamasaki, Yuichi a Shirata, Osamu a Asano, Tanemasa a

a KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AFM; Cross hatch; MOSFET; Oxidation; SiGe; Strained Si; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; FABRICATION; GERMANIUM; MORPHOLOGY; OXIDATION; SILICON; SILICON COMPOUNDS; SILICON WAFERS; STRAIN; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

CROSS-HATCH; OXIDATION BEHAVIOR; SIGE; STRAINED-SI;

MOSFET DEVICES;

EID: 3142568964 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1886 Document Type: Conference Paper

Times cited : (13)

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