Angular dependence of etch rate of a silsesquioxane-based low dielectric constant material in fluorocarbon plasmas

Electrochemical and Solid-State Letters

Volumn 6, Issue 1, 2003, Pages

  Hwang, Sung Wook ^a   Lee, Gyeo Re ^a   Min, Jae Ho ^a   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FLUOROCARBONS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SILICON WAFERS; SILICONES; SPUTTER DEPOSITION;

ANGULAR DEPENDENCE; ETCH RATE; HYBRID-ORGANIC-SILOXANE-POLYMER; LOW DIELECTRIC CONSTANT MATERIAL; SILSESQUIOXANE;

DIELECTRIC MATERIALS;

EID: 0037241330     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1524750     Document Type: Article

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