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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 4, 1996, Pages 2138-2150

Ion-assisted Si/XeF2-etching: Influence of ion/neutral flux ratio and ion energy

(3) Vugts, M J M a Hermans, L J F a Beijerinck, H C W a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030504420 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.580038 Document Type: Article

Times cited : (17)

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